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| VISHAY TCET111.(G) Vishay Semiconductors Optocoupler with Phototransistor Output \ Features * CTR offered in 9 Groups * Isolation materials according to UL94-VO * Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664) * Climatic classification 55/100/21 (IEC 68 part 1) * Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection * Low temperature coefficient of CTR * Temperature range - 40 to + 110 C * Coupling System U * Rated impulse voltage (transient overvoltage) VIOTM = 8 kVpeak * Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV * Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 Vpeak ) * Rated recurring peak voltage (repetitive) VIORM = 600 V RMS * Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI 175 * Thickness through insulation 0.75 mm * Internal creepage distance > 4 mm * External creepage distance > 8 mm Coll. Emitter 17918 1 Anode Cath. C * For appl. class I - III at mains voltage 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface, with operating temperature up to 110C Description The TCET111.(G) consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. The elements are mounted on one lead frame using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Agency Approvals * BSI: EN 60065:2002, EN 60950:2000 Certificate number 7081 and 7402 * FIMKO (SETI): EN 60950:2000 Certificate number FI 18973 * Underwriters Laboratory (UL) File number E 76222 * VDE IEC 60747 Certificate number 115667 VDE Standards These couplers perform safety functions according to the following equipment standards: VDE 0884 / IEC 60747:2003 Optocoupler for electrical safety requirements IEC 60950 Office machines (applied for reinforced isolation for mains voltage < 400 VRMS) VDE 0804 Telecommunication apparatus and data processing IEC 60065 Safety for mains-operated electronic and related household apparatus Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): * For appl. class I - IV at mains voltage 300 V Document Number 83546 Rev. A3, 18-Mar-03 www.vishay.com 1 TCET111.(G) Vishay Semiconductors Order Information Part TCET1110 (G) TCET1111 (G) TCET1112 (G) TCET1113 (G) TCET1114 (G) TCET1115 (G) TCET1116 (G) TCET1117 (G) TCET1118 (G) TCET1119 (G) Remarks 50 to 600 % 40 to 80 % 63 to 125 % 100 to 200 % 160 to 320 % 50 to 150 % 100 to 300 % 80 to 160 % 130 to 260 % 200 to 400 % VISHAY G = Lead form 10.16 mm; G is not marked on the body, 4 Pin = Single Channel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the devise. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Emitter Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature tp 10 s Test condition Symbol VR IF IFSM PDiss Tj Value 6 60 1.5 100 125 Unit V mA A mW C Detector Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature tp/T = 0.5, tp 10 ms Test condition Symbol VCEO VECO IC ICM PDiss Tj Value 70 7 50 100 150 125 Unit V V mA mA mW C Coupler Parameter Isolation test voltage (RMS) Total power dissipation Operating ambient temperature range Storage temperature range Soldering temperature 2 mm from case t 10 s t = 1 min Test condition Symbol VIO Ptot Tamb Tstg Tsd Value 5 250 - 40 to + 110 - 55 to + 125 260 Unit kV mW C C C www.vishay.com 2 Document Number 83546 Rev. A3, 18-Mar-03 VISHAY Electrical Characteristics TCET111.(G) Vishay Semiconductors Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Emitter Parameter Forward voltage Junction capacitance Test condition IF = 50 mA VR = 0 V, f = 1 MHz Symbol VF Cj Typ. 1.25 50 Max 1.6 Unit V pF Detector Parameter Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Test condition IC = 1 mA IE = 100 A VCE = 20 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min 70 7 10 100 Typ. Max Unit V V nA Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test condition IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 f = 1 MHz Symbol VCEsat fc Ck 110 0.3 Typ. Max 0.3 Unit V kHz pF Current Transfer Ratio Parameter IC /IF Test condition VCE = 5 V, IF = 1 mA VCE = 5 V, IF = 1 mA VCE = 5 V, IF = 1 mA VCE = 5 V, IF = 1 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 10 mA Part TCET1111 (G) TCET1112 (G) TCET1113 (G) TCET1114 (G) TCET1110 (G) TCET1115 (G) TCET1116 (G) TCET1117 (G) TCET1118 (G) TCET1119 (G) TCET1111 (G) TCET1112 (G) TCET1113 (G) TCET1114 (G) Symbol CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR Min 0.13 0.22 0.34 0.56 0.50 0.5 1.0 0.8 1.3 2.0 0.40 0.63 1.0 1.6 Typ. 0.30 0.45 0.70 0.90 6.0 1.5 3.0 1.6 2.6 4.0 0.8 1.25 2.0 3.2 Max Unit % % % % % % % % % % % % % % Document Number 83546 Rev. A3, 18-Mar-03 www.vishay.com 3 TCET111.(G) Vishay Semiconductors Maximum Safety Ratings (according to VDE 0884) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. VISHAY Emitter Parameter Forward current Symbol IF Max 130 Unit mA Detector Parameter Power dissipation Symbol PDiss Max 265 Unit mW Coupler Parameter Rated impulse voltage Safety temperature Symbol VIOTM Tsi Max 8 150 Unit kV C Insulation Rated Parameters Parameter Partial discharge test voltage Routine test Partial discharge test voltage Lot test (sample test), (see figure 2) Insulation resistance Test condition 100 %, ttest = 1 s tTr = 60 s, ttest = 10 s Symbol Vpd VIOTM Min 1.6 8 Unit kV kV tTr = 60 s, ttest = 10 s VIO = 500 V VIO = 500 V, Tamb = 100 C VIO = 500 V, Tamb = 150 C (construction test only) Vpd RIO RIO RIO VIOTM 1.3 10 12 kV 1011 109 Ptot - Total Power Dissipation ( mW ) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 13930 Phototransistor Psi ( mW ) VPd VIOWM VIORM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s IR-Diode Isi ( mA ) 0 t1 tTr = 60 s t2 t3 ttest t4 tstres 94 9182 Tsi - Safety Temperature ( C ) t Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE 0884; IEC60747 www.vishay.com 4 Document Number 83546 Rev. A3, 18-Mar-03 VISHAY Switching Characteristics Parameter Delay time (see figure 3) Rise time (see figure 3) Turn-on time (see figure 3) Storage time (see figure 3) Fall time (see figure 3) Turn-off time (see figure 3) Turn-on time see figure 4) Turn-off time see figure 4) Test condition VS = 5 V, IC = 2 mA, RL = 100 VS = 5 V, IC = 2 mA, RL = 100 VS = 5 V, IC = 2 mA, RL = 100 VS = 5 V, IC = 2 mA, RL = 100 VS = 5 V, IC = 2 mA, RL = 100 VS = 5 V, IC = 2 mA, RL = 100 VS = 5 V, IF = 10 mA, RL = 1 k VS = 5 V, IF = 10 mA, RL = 1 k Symbol td tr ton ts tf toff ton toff TCET111.(G) Vishay Semiconductors Typ. 3.0 3.0 6.0 0.3 4.7 5.0 9.0 10.0 Unit s s s s s s s s IF 0 IF IF +5V IC = 2 mA; adjusted through input amplitude 96 11698 0 IC 100% 90% tp t RG = 50 W tp = 0.01 T tp = 50 s Channel I Channel II 50 W 100 W Oscilloscope RL = 1 MW CL = 20 pF 10% 0 tr td ton pulse duration delay time rise time turn-on time ts tf toff t storage time fall time turn-off time 95 10804 tp td tr ton (= td + tr) ts tf toff (= ts + tf) Figure 3. Test circuit, non-saturated operation Figure 5. Switching times 0 IF IF = 10 mA +5V IC RG = 50 W tp = 0.01 T tp = 50 s Channel I Channel II 50 W 1 kW Oscilloscope RL 1 MW CL 20 pF 95 10843 Figure 4. Test circuit, saturated operation Document Number 83546 Rev. A3, 18-Mar-03 www.vishay.com 5 TCET111.(G) Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 300 Ptot -Total Power Dissipation ( mW ) Coupled Device 10000 10000.00 VISHAY 250 200 Phototransistor ICEO - Collector Dark Current, with open Base ( nA ) 1000 1000.00 VCE = 30 V 150 IR-Diode 100 100.00 10 V 100 50 0 0 20 40 60 80 100 120 Tamb - Ambient Temperature ( C ) 10 10.00 1 1.00 0 16738 16736 20 40 60 80 100 Tamb - Ambient Temperature ( C ) 120 Figure 6. Total Power Dissipation vs. Ambient Temperature Figure 9. Collector Dark Current vs. Ambient Temperature 100 IC - Collector Current ( mA ) 1000.0 V CE=5V 10 I F - Forward Current ( mA) 100.0 10.0 1 1.0 0.1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 V F - Forward Voltage ( V ) 0.01 0.1 95 11027 1 10 100 I F - Forward Current ( mA ) Figure 7. Forward Current vs. Forward Voltage Figure 10. Collector Current vs. Forward Current 100 CTR rel - Relative Current Transfer Ratio 1.20 IC - Collector Current ( mA) 20mA I F=50mA 10 10mA 5mA 1 2mA 1mA 0.1 0.1 95 10985 1.00 0.80 0.60 0.40 0.20 0.00 -40 -20 VCE = 5 V IF = 5 mA 0 20 40 60 80 100 120 1 10 100 16737 Tamb - Ambient Temperature ( C ) V CE - Collector Emitter Voltage ( V ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature Figure 11. Collector Current vs. Collector Emitter Voltage www.vishay.com 6 Document Number 83546 Rev. A3, 18-Mar-03 VISHAY TCET111.(G) Vishay Semiconductors 50 40 30 toff 20 10 0 0 95 11031 VCEsat- Collector Emitter Saturation Voltage ( V) 20% 0.8 CTR=50% 0.6 0.4 0.2 0 1 10 I C - Collector Current ( mA ) 100 ton / toff -Turn on / Turn off Time ( s ) 1.0 Saturated Operation V S=5V RL=1k 10% ton 5 10 15 20 95 11028 I F - Forward Current ( mA ) Figure 12. Collector Emitter Saturation Voltage vs. Collector Current 1000 V CE=5V 100 Figure 15. Turn on / off Time vs. Forward Current Pin1 Indication CTR - Current Transfer Ratio ( % ) Type ET1110 V 223 U63 16745 10 1 0.1 95 11029 1 10 100 Company Logo Date Code (YM) Coupling System Indicator Production Location I F - Forward Current ( mA ) Figure 13. Current Transfer Ratio vs. Forward Current Figure 16. Marking example ton / toff -Turn on / Turn off Time ( s ) 10 8 6 toff 4 2 0 0 2 4 6 10 Non Saturated Operation V S=5V RL=100 ton 95 11030 I C - Collector Current ( mA ) Figure 14. Turn on / off Time vs. Collector Current Document Number 83546 Rev. A3, 18-Mar-03 www.vishay.com 7 TCET111.(G) Vishay Semiconductors Package Dimension of TCET111. in mm VISHAY 14789 Package Dimension of TCLT11.G in mm 14792 www.vishay.com 8 Document Number 83546 Rev. A3, 18-Mar-03 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. TCET111.(G) Vishay Semiconductors 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83546 Rev. A3, 18-Mar-03 www.vishay.com 9 |
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